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DEVICE PHYSICS

Module code: EP409
Credits: 5
Semester: 2
Department: EXPERIMENTAL PHYSICS
International:
Coordinator: Dr Peter van der Burgt (EXPERIMENTAL PHYSICS)

	Overview
	The aim of this module is to provide a comprehensive overview of semiconductor physics and its application to a variety of semiconductor devices. Module Content Revision of semiconductor physics: intrinsic and extrinsic semiconductors, continuity equations, electron transport, Haynes-Shockley experiment. Integrated circuits: processes of IC production, device fabrication, large scale integration, types of ICs, manufacturing, technology families, future challenges. Junctions: p-n junction, forward and reverse bias, metal-semiconductor junction, insulator-semiconductor junction, the MOS capacitor, bipolar junction transistors and field effect transistors. Lasers: stimulated emission, population inversion, laser cavity, semiconductor lasers, quantum cascade lasers. Opto-electronics: physics and operation of LEDs, solar cells, photodiodes, diode lasers, OLEDs, fibre optics, semiconductor optics and applications. Imaging devices: CCDs and CMOS devices, CCD readout, image formats and image processing. Superconductivity: Meissner effect, London equations, flux quantization, Ginzburg-Landau equations, Josephson junction, SQUID, introduction to BCS theory, high-temperature superconductors.

Overview

The aim of this module is to provide a comprehensive overview of semiconductor physics and its application to a variety of semiconductor devices.

Module Content

Revision of semiconductor physics: intrinsic and extrinsic semiconductors, continuity equations, electron transport, Haynes-Shockley experiment.

Integrated circuits: processes of IC production, device fabrication, large scale integration, types of ICs, manufacturing, technology families, future challenges.

Junctions: p-n junction, forward and reverse bias, metal-semiconductor junction, insulator-semiconductor junction, the MOS capacitor, bipolar junction transistors and field effect transistors.

Lasers: stimulated emission, population inversion, laser cavity, semiconductor lasers, quantum cascade lasers.

Opto-electronics: physics and operation of LEDs, solar cells, photodiodes, diode lasers, OLEDs, fibre optics, semiconductor optics and applications.

Imaging devices: CCDs and CMOS devices, CCD readout, image formats and image processing.

Superconductivity: Meissner effect, London equations, flux quantization, Ginzburg-Landau equations, Josephson junction, SQUID, introduction to BCS theory, high-temperature superconductors.

	Learning Outcomes
	On successful completion of the module, students should be able to: Describe the essential processes used in the manufacturing of semiconductor structures, devices and circuits. Discuss the physics of intrinsic and extrinsic semiconductors, and the processes involved in carrier transport in semiconductors. Discuss the properties of the different junctions used in semiconductors, including the p-n junction, and the operation of bipolar junction transistors and field effect transistors. Explain the principle of operation of a laser including the concept of population inversion and stimulated emission. Describe the physics and operation of a variety of opto-electronic devices based on the p-n junction. Explain the structure and operation of imaging devices such as CCDs and CMOS sensors. Discuss key aspects and applications of integrated circuits and nanotechnology, including, manufacturing, technology families and future challenges. Solve relevant conceptual and numerical problems.

Learning Outcomes

Teaching & Learning methods

Assessment

	Autumn Supplementals/Resits
	Are supplemental/resit registrations permitted? Yes Is Supplemental Continuous Assessment registration permitted? No Is Supplemental Continuous Assessment capped? No

	Pre-Requisites
	3rd Year Experimental Physics or equivalent

Timetable

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Courses / Module

DEVICE PHYSICS

Semester 1

Semester 2